3BHL000391P0101 Power Semiconductor Switchgear 5SHX1445H0001

The IGCT is a new type of power semiconductor switching device (Integrated Gate Commutated Thyristor = Gate Commutated Thyristor + Gate Unit) developed for use in medium voltage inverters in giant power electronics packages. converter devices in terms of IGCT has made great progress in terms of power, reliability, switching speed, efficiency, cost, weight and volume, bringing a new leap to power electronics packages

High power (usually tens to thousands of amps of current and hundreds of volts or more) electronic devices used in electrical energy conversion and power control circuits. Can be divided into semi-controlled devices, fully controlled devices and uncontrolled devices, including thyristor for semi-controlled devices, withstand voltage and current capacity in all devices high; power diode for uncontrolled devices, simple structure and principle, reliable work; can also be divided into voltage-driven devices and current-driven devices, including GTO, GTR for current-driven devices, IGBT, power MOSFET for voltage-driven devices.

IGCT is a new type of device developed on the basis of thyristor technology in combination with IGBT and GTO technology, suitable for high voltage and large capacity inverter systems, and is a new type of power semiconductor device used in giant power electronic packages.

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