5SHY3545L0009 3BHB013085R0001 3BHE009681R0101 GVC750BE101 Thyristor IGCT module
5SHY3545L0009 3BHB013085R0001 3BHE009681R0101 GVC750BE101 Used to control the DC transmission and conversion of AC power. The module integrates the GTO chip with the anti-parallel diode and gate driver circuit, and then connects it with the gate driver in a low inductance mode at the periphery, combining the stable turn-off ability of the transistor and the advantages of the low on-state loss of the thyristor.
5SHY3545L0009 3BHB013085R0001 3BHE009681R0101 GVC750BE101 Effectively controls the current by controlling the on-off status of the PN junction on the silicon chip.
5SHY3545L0009 3BHB013085R0001 3BHE009681R0101 GVC750BE101 module can achieve high efficiency energy transmission and control through high current, to provide stable power for various industrial equipment and systems.
5SHY3545L0009 3BHB013085R0001 3BHE009681R0101 GVC750BE101 has excellent thermal and electrical stability, which can ensure long-term stable operation, reduce the frequency of failure and maintenance, and improve the use efficiency and life of the equipment.
