The IGCT is a new type of power semiconductor switching device (Integrated Gate Commutated Thyristor = Gate Commutated Thyristor + Gate Unit) developed for use in medium voltage inverters in giant power electronics packages. converter devices in terms of power, reliability, switching speed, efficiency, cost, weight and volume, bringing a new leap forward in power electronics packages. IGCT is a GTO chip integrated with an anti-parallel diode and a gate driver circuit, then connected to its gate driver in a low inductance way at the periphery, combining the advantages of the stable switching capability of the transistor and the low on-state loss of the thyristor in the The IGCT is characterised by high current, high blocking voltage, high switching frequency, high reliability, compact structure and low conduction loss, as well as low cost and high yield rate. IGCTs have been successfully used in medium voltage inverters for 11 years (until 2009) in power system grid installations (100 MVA) and medium power industrial drives (5 MW).
Power Electronic Device (Power Electronic Device), also known as power semiconductor devices, used for electrical energy conversion and electrical energy control circuit in the high-power (usually refers to the current for tens to thousands of amps, voltage for hundreds of volts or more) electronic devices. Can be divided into semi-controlled devices, full-controlled devices and uncontrollable devices, including thyristor for semi-controlled devices, withstand voltage and current capacity in all devices high; power diode for uncontrollable devices, simple structure and principle, reliable work; can also be divided into voltage-driven devices and current-driven devices, including GTO, GTR for current-driven devices, IGBT, power MOSFET for voltage-driven devices.
1.MCT (MOS Control led Thyristor): The MOS Control Thyristor MCT is a new MOS and bipolar composite device. The MCT combines the high impedance and low drive characteristics of the MOSFET with the power and fast switching speed of the MCT and the high voltage and high current characteristics of the thyristor to form a high power, high voltage, fast fully controlled device. In essence the MCT is a MOS gate-controlled thyristor. It can be switched on or off by applying a narrow pulse to the gate and is made up of numerous cells connected in parallel. It has the following advantages over GTR, MOSFET, IGBT, GTO and other devices: (1) High voltage and high current capacity, blocking voltage has reached 3000V, peak current up to 1000A, maximum switchable current density of 6000kA/m2.
2. (2) Small through-state voltage drop and low loss, with a through-state voltage drop of approximately 11V.
3.(3) Very high dv/dt and di/dt tolerances, dv/dt has reached 2kV/s and di/dt is 2kA/s.
4.(4) Fast switching speed, low switching losses, turn-on time of about 200ns, 1000V devices can be turned off within 2s.
5.2. IGCT (Intergrated Gate Commutated Thyristors) IGCT is a new type of device developed on the basis of thyristor technology combined with IGBT and GTO technologies, suitable for high voltage and large capacity inverter systems, is a new type of power semiconductor device used in giant power electronic packages.
6. IGCT is a GTO chip integrated with anti-parallel diode and gate driver circuit, and then connected with its gate driver in a low inductance way at the periphery, combining the advantages of stable turn-off capability of transistor and low on-state loss of thyristor. The IGCT chip, without series and without parallel, has a power of 0.5~3MW for two-level inverters and 1~6MW for three-level inverters; if the reverse diode is separated and not integrated with the IGCT, the power of two-level inverters can be expanded to 4/5MW and three-level to 9MW.
7. At present, IGCT has been commercialized, ABB manufactured IGCT products with the highest performance parameters of 4 [1] 5 kV / 4 kA, the highest level of development for 6 kV / 4 kA. 1998, Japan Mitsubishi also developed a diameter of 88 mm GCT thyristor IGCT low loss, fast switching and other advantages to ensure that it can be used reliably and efficiently for 300kW ~ 10MW converter. 10MW converters without the need for series and parallel connections.
8.3. IEGT (Injection Enhanced Gate Transistor) The IEGT is a series of IGBT power electronics with a withstand voltage of 4kV or more, which has made a quantum leap forward in high-capacity power electronics by adopting an enhanced injection structure to achieve a low on-state voltage. The IEGT has potential as a MOS series power electronic device with low loss, high speed operation, high withstand voltage, active gate drive intelligence and the potential for further current expansion due to the trench structure and the self-levelling characteristics of multiple chips connected in parallel. In addition, a wide range of derivatives are available in modular packages, which are highly desirable for large and medium capacity converter applications. The IECT developed by Toshiba Japan takes advantage of the electron injection enhancement effect to combine the advantages of both IGBTs and GTOs: low saturation voltage drop, safe operating area (absorption loop capacity is only about one tenth that of a GTO), low gate drive power (two orders of magnitude lower than that of a GTO) and high operating frequency. The device has a flat crimp motor lead structure for high reliability and performance has been achieved at 4.5 kV/ 1500 A.
5SHX0445D0001
3BHL000462R0020
3BHL000181P0001
3BHL000495P0003
3BHL000259P0001
3BHL000382P0101
5SHY 3545L0006 IGCT MODULE
5SHX2645L0002 IGCT RC MODULE 91
IGCT MODULE 5SHY 3545L0009
5SHY 3545L0010 IGCT MODULE
5SHX 1960L0005, 91mm RC-IGCT
RC-IGCT 5SHX 1960L0006, 91MM GVC736
5SHX 0660F0002, 51MM RC-IGCT
5SHY 4045L0001 IGCT MODULE
5SHX 1060H0003, 68MM RC-IGCT
IGCT MODULE 5SHY 3545L0016, 4500V, 91MM
IGCT 4500V, 91MM, 5SHY 4045L0003
4500V, 91MM, 5SHY 4045L0004GVC736 IGCT
TRIC IGCT 5SHY5055L0002 5.5KV 91MM
IGCT 4500V, 91MM, 5SHY 3545L0014
IGCT MODULE 5SHY 3545L0014, 4500V, 91MM
IGCT REPLACEMENT TOOL IGCT
