IGCT integrated gate converter thyristor
5SHX2645L0002 3BHB012961R0001 3BHE009681R0101 GVC750BE01 Novel power semiconductor switching devices
5SHX2645L0002 3BHB012961R0001 3BHE009681R0101 GVC750BE01 Novel power semiconductor switching devices
IGCT integrated Gate Commutated Thyristors (IGCT integrated gate commutated thyristors = gate commutated thyristors + gate units) is a new type of power semiconductor switching device developed by medium voltage inverter for use in large power electronics packages. It was proposed by ABB in 1997. IGCT has made great progress in power, reliability, switching speed, efficiency, cost, weight and volume, and has brought a new leap to power electronic complete sets.
5SHX2645L0002 3BHB012961R0001 3BHE009681R0101 GVC750BE01 Novel power semiconductor switching devices
- MOS Control led Thyristor (MCT) : MOS control Thyristor MCT is a new type of MOS and bipolar composite device. As shown in the picture above. MCT is the MOSFET high impedance, low drive figure MCT power, fast switching speed characteristics and thyristor high voltage, high current special type combined to form a high power, high voltage, fast full control device. In essence, MCT is a MOS gate controlled thyristor. It can be switched on or off by adding a narrow pulse to the gate, and it is composed of numerous single cells in parallel. Compared with GTR, MOSFET, IGBT, GTO and other devices, it has the following advantages: (1) High voltage, large current capacity, blocking voltage has reached 3000V, peak current reaches 1000A, and maximum turn-off current density is 6000kA/m2;
- The on-state voltage drop is small, the loss is small, the on-state voltage drop is about 11V
- Extremely high dv/dt and di/dt tolerance, dv/dt has reached 2kV/s, di/dt is 2kA/s
- The switching speed is fast, the switching loss is small, the opening time is about 200ns, the 1000V device can be turned off within 2s;
- IGCT (Intergrated Gate Commutated Thyristors) IGCT is a new type of device developed on the basis of thyristor technology combined with IGBT and GTO, which is suitable for high voltage and large capacity frequency conversion system. It is a new type of power semiconductor device used in giant power electronic complete sets.
The IGCT combines the high-speed switching characteristics of the IGBT (insulated gate bipolar transistor) with the high blocking voltage and low on-loss characteristics of the GTO (gate shutdown gate tube), and the trigger signal is generally transmitted to the IGCT unit through the optical fiber. In the phase module of the ACS6000 marginal rectifier unit, each phase module consists of an IGCT, a diode, and a clamp capacitor, and is powered by an independent gate power supply unit GUSP.
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5SHY3545L0010 3BHB013088R0001 Novel power semiconductor switching devices
S-073N 3BHB009884R0021
S-093H 3BHB009885R0004
S-113H 3BHB018008R0003
ABB 5SHY series IGCT SCR
5SHY35L4510、5SHY3545L0003、5SHY3545L0005、5SHY3545L0009、5SHY35L4520，5SHY3545L0014，5SHY35L4512、5SHY35L4520 5SXE10-0181 AC10272001R0101，5SHY3545L0009 3BHB013085R0001 3BHE009681R0101 GVC750BE101，5SHY5045L0020，5SHY3545L0010/3BHB013088R0001
The AC 800PEC has a unique combination of features for demanding applications:
- Short cycle times, down to 100 μs
- High processing power
- Fast communication and I/O via optical links
- Programming tools:
– System engineering with IEC61131-3 languages using ABB’s Control Builder, both Compact and Professional versions available
– Product and control development using MATLAB®/Simulink® for model-based design, easily bridging the gap from simulation to
implementation
- Full integration into ABB Ability™ System 800xA
- Innovative and flexible use of FPGAs to include protocols and application functionality in the devices without creating additional processor load
- Optical communication
- Industrial grade hardware with no moving parts
- Long life cycle, easy upgrading
- Robust reliance file system, insusceptible post power loss
